Resistive switching device based on high-mobility graphene and its switching mechanism
نویسندگان
چکیده
منابع مشابه
Advances in Resistive Switching Memories Based on Graphene Oxide
Memory devices are a prerequisite for today’s information technology. In general, two dif‐ ferent segments can be distinguished. Random access type memories are based on semicon‐ ductor technology. These can be divided into static random access memories (SRAM) and dynamic random access memories (DRAM). In the following, only DRAM will be consid‐ ered, because it is the main RAM technology for s...
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Available online 17 September 2012
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2019
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1168/2/022074